Pop devices and methods of forming the same

US9793246B1 · kind B1 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Hua-Wei Tseng · New Taipei, TW
• An-Jhih Su · Xiluo, TW
• Hsien-Wei Chen · Hsinchu, TW
• Li-Hsien Huang · Zhubei City, TW
• Tien-Chung Yang · Jinshanmian, TW

Key dates

• Filing date: Jul 21, 2016
• Grant date: Oct 17, 2017
• Expiry date: Jul 21, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/15311
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

PoP devices and methods of forming the same are disclosed. A PoP device includes a first package structure and a second package structure. The first package structure includes a first chip, and a plurality of active through integrated fan-out vias and a plurality of dummy through integrated fan-out vias aside the first chip. The second package structure includes a plurality active bumps bonded to the plurality of active through integrated fan-out vias, and a plurality of dummy bumps bonded to the plurality of dummy through integrated fan-out vias. Besides, a total number of the active through integrated fan-out vias and the dummy through integrated fan-out vias at a first side of the first chip is substantially the same as a total number of the active through integrated fan-out vias and the dummy through integrated fan-out vias at a second side of the first chip.