Semiconductor device
US9793345B1 · kind B1 · utility
3Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 26, 2016 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Dec 26, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
Abstract
A semiconductor device is disclosed, including a plurality of gate rings formed on a substrate and concentrically surrounding a first doped region formed in the substrate. The gate rings are equipotentially interconnected by at least a connecting structure. A second doped region is formed in the substrate, exposed from the space between adjacent gate rings. A third doped region is formed in the substrate adjacent to the outer perimeter of the outermost gate ring. The first doped region, the third doped region and the gate rings are electrically biased and the second doped regions are electrically floating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.