Method of manufacturing a semiconductor device with an isolation region and a device manufactured by the method
US9793348B2 · kind B2 · utility
1Cited by
3References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 19, 2015 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Nov 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D87/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes forming trench isolation structures, exposing some of the trench isolation structures 28 to leave others 30 masked, and then selectively etching a buried layer to form a cavity 32 under an active device region 34. The active device region 34 is supported by support regions in the exposed trenches 28. The buried layer may be a SiGe layer on a Si substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.