Semiconductor devices including a rare earth element and methods of forming semiconductor devices including a rare earth element
US9793368B2 · kind B2 · utility
6Cited by
7References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2016 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Feb 19, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
Abstract
Semiconductor devices are provided. A semiconductor device includes an insulating layer. The semiconductor device includes a rare earth element supply layer on the insulating layer. Moreover, the semiconductor device includes a metal layer that is on the rare earth element supply layer. The rare earth element supply layer is between the insulating layer and the metal layer. Methods of forming semiconductor devices are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.