Optoelectronic device with improved light extraction efficiency
US9793431B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 20, 2015 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Apr 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/10
Abstract
The optoelectronic device (1) comprises a substrate (2), a light-emitting member (3) comprising an elongate element (4) extending in a direction forming an angle with the substrate (2). An intermediate element (5) is interposed between the substrate (2) and a longitudinal end of the elongate element (4) closest to the substrate (2). Furthermore, the substrate (2) is transparent to said light and the intermediate element (5), transparent to said light, comprises at least one nitride of a transition metal, and has a thickness less than or equal to 9 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.