Patent · US Active

Optoelectronic device with improved light extraction efficiency

US9793431B2 · kind B2 · utility

2Cited by
3References
21Claims
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Key dates

Filing dateApr 20, 2015
Grant dateOct 17, 2017
Priority date
Expiry dateApr 20, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H29/10

Abstract

The optoelectronic device (1) comprises a substrate (2), a light-emitting member (3) comprising an elongate element (4) extending in a direction forming an angle with the substrate (2). An intermediate element (5) is interposed between the substrate (2) and a longitudinal end of the elongate element (4) closest to the substrate (2). Furthermore, the substrate (2) is transparent to said light and the intermediate element (5), transparent to said light, comprises at least one nitride of a transition metal, and has a thickness less than or equal to 9 nm.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.