Apparatus and method for treating a substrate
US9793476B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2012 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Jan 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided are a substrate treating apparatus and method of manufacturing a phase-change layer having superior deposition characteristics. The substrate treating method of manufacturing a phase-change memory includes forming a bottom electrode on a substrate on which a pattern is formed, performing surface treating for removing impurities generated or remaining on a surface of the substrate while the bottom electrode is formed, performing nitriding on the surface of the substrate from which the impurities are removed, and successively depositing a phase-change layer and a top electrode on the bottom electrode. The substrate treating apparatus for manufacturing a phase-change memory includes a load lock chamber into/from which a plurality of substrates are loaded or unloaded, the load lock chamber being converted between an atmosphere state and a vacuum state, a nitriding chamber in which nitriding is performed on a surface of a substrate on which a bottom electrode is disposed, the nitriding chamber being coupled to one side of a plurality of sides of the vacuum transfer chamber, and a process chamber in which a phase-change layer is deposited on the surface of the substrate on which…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.