Selective epitaxial growth method and film forming apparatus
US9797067B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2014 |
| Grant date | Oct 24, 2017 |
| Priority date | — |
| Expiry date | Aug 4, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02639
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A selective epitaxial growth method includes preparing a target object including a single crystal substrate in which an epitaxial growth region is partitioned by a suppression film; and growing the epitaxial layer on the epitaxial growth region of the target object until a predetermined film thickness is obtained. The growing the epitaxial layer includes first source gas supply process of supplying a source gas onto the target object under a first pressure to grow a first epitaxial layer on the epitaxial growth region, first removing process of removing deposits on the suppression film, second source gas supply process of supplying the source gas onto the target object under a second pressure higher than the first pressure, and second removing process of removing the deposits on the suppression film. The second source gas supply process and the second removing process are repeated until the predetermined film thickness is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.