Patent · US Active

Semiconductor devices and methods of formation thereof

US9799583B2 · kind B2 · utility

0Cited by

1References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Thomas Ostermann · Velden am Wörther See, AT
Andrew Christopher Graeme Wood · St. Jakob im Rosental, AT
Peter Brandl · Linz, AT

Key dates

Filing date	Nov 7, 2013
Grant date	Oct 24, 2017
Priority date	—
Expiry date	Feb 25, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In one embodiment, a semiconductor device includes a first contact pad disposed at a top side of a workpiece, a second contact pad disposed at the top side of the workpiece. An isolation region is disposed between the first contact pad and the second contact pad. A metal strip is disposed at least partially within the isolation region. The metal strip is not coupled to an external potential node.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.