Three dimensional NAND device containing dielectric pillars for a buried source line and method of making thereof

US9799670B2 · kind B2 · utility

Assignee

• Sandisk Technologies, Inc. · US

Inventors

• Masatoshi Nishikawa · Yokkaichi, JP
• Jin Liu · San Jose, US
• Chun Ge · San Jose, US
• Yanli Zhang · San Jose, US

Key dates

• Filing date: Feb 8, 2016
• Grant date: Oct 24, 2017
• Expiry date: Feb 8, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/037

Abstract

A three-dimensional memory device includes an alternating stack of electrically conductive layers and insulating layers located over a substrate, an array of memory stack structures, each memory stack structure extending through the alternating stack and including a memory film and a semiconductor channel laterally surrounded by the memory film, and an array of dielectric pillars located between the alternating stack and the substrate.