Structure of dual gate oxide semiconductor TFT substrate

US9799677B2 · kind B2 · utility

Assignee

• TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED · CN

Inventors

• Shimin Ge · Nanhu, CN
• Hejing Zhang · Tangxia, CN
• Chihyuan Tseng · Tangxia, CN
• Chihyu Su · Tangxia, CN
• Wenhui Li · Nanhu, CN
• Longqiang Shi · Nanhu, CN
• Xiaowen Lv · Nanhu, CN

Key dates

• Filing date: Dec 1, 2016
• Grant date: Oct 24, 2017
• Expiry date: Dec 1, 2036

Classification

• Technology area (CPC G): Physics
• CPC primary: G02F2201/123
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A dual gate oxide semiconductor thin-film transistor (TFT) substrate includes a substrate; a bottom gate positioned on the substrate; a bottom gate isolation layer positioned on the substrate and the bottom gate; a first oxide semiconductor layer positioned on the bottom gate isolation layer above the bottom gate; an oxide conductor layer positioned on the bottom gate isolation layer at one side of the first oxide semiconductor layer; a top gate isolation layer positioned on the first oxide semiconductor layer, the oxide conductor layer, and the bottom gate isolation layer; a top gate positioned on the top gate isolation layer above a middle part of the first oxide semiconductor layer; a source and a drain positioned on the top gate isolation layer at two sides of the top gate; and a passivation layer positioned on the top gate isolation layer, the source, the drain, and the top gate.