Back side illuminated image sensor with deep trench isolation structures and self-aligned color filters
US9799697B2 · kind B2 · utility
13Cited by
1References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 25, 2014 |
| Grant date | Oct 24, 2017 |
| Priority date | — |
| Expiry date | Aug 27, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/024
Abstract
A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A plurality of isolation structures are each disposed between two respective radiation-sensing regions. The isolation structures protrude out of the second side of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.