PN junction chemical sensor
US9799757B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2009 |
| Grant date | Oct 24, 2017 |
| Priority date | — |
| Expiry date | Sep 5, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/4145
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A sensor device (100, 2800) for detecting particles, the sensor device (100, 2800) comprising a substrate (102), a first doped region (104) formed in the substrate (102) by a first dopant of a first type of conductivity, a second doped region (106, 150) formed in the substrate (102) by a second dopant of a second type of conductivity which differs from the first type of conductivity, a depletion region (108) at a junction between the first doped region (104) and the second doped region (106, 150), a sensor active region (110) adapted to influence a property of the depletion region (108) in the presence of the particles, and a detection unit (112) adapted to detect the particles based on an electric measurement performed upon application of a predetermined reference voltage between the first doped region (104) and the second doped region (106, 150), the electric measurement being indicative of the presence of the particles in the sensor active region (110).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.