High voltage transistor structure and method
US9799766B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2013 |
| Grant date | Oct 24, 2017 |
| Priority date | — |
| Expiry date | Feb 20, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
Abstract
A high voltage transistor structure comprises a first double diffused region and a second double diffused region formed in a first well of a substrate, wherein the first and second double diffused regions are of the same conductivity as the substrate, a first drain/source region formed in the first double diffused region, a first gate electrode formed over the first well and a second drain/source region formed in the second double diffused region. The high voltage transistor structure further comprises a first spacer formed on a first side of the first gate electrode, wherein the first spacer is between the first drain/source region and the first gate electrode, a second spacer formed on a second side of the first gate electrode and a first oxide protection layer formed between the second drain/source region and the second spacer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.