FinFET structure device
US9799770B2 · kind B2 · utility
1Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2016 |
| Grant date | Oct 24, 2017 |
| Priority date | — |
| Expiry date | Mar 9, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
The present invention provides a FinFET device, including at least one fin structure, wherein the fin structure has a first-type well region, and a second-type well region adjacent to the first-type well region, a trench located in the fin structure and disposed between the first-type well region and the second-type well region, an insulating layer disposed in the trench, and a metal gate crossing over and disposed on the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.