Molybdenum (IV) amide precursors and use thereof in atomic layer deposition
US9802220B2 · kind B2 · utility
18Cited by
8References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2011 |
| Grant date | Oct 31, 2017 |
| Priority date | — |
| Expiry date | Aug 25, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45525
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Molybdenum (IV) amide complexes are disclosed herein corresponding in structure to Formula (I): wherein: L is —NR1R2; R1 and R2 are C1-C6-alkyl or hydrogen; R is C1-C6-alkyl; and n is zero, 1, 2 or 3. Further, methods of forming MoO2 films by atomic layer deposition (ALD) using Formula (I) complexes and Mo[N(Me)(Et)]4 are disclosed herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.