Method of lithography process with inserting scattering bars
US9805154B2 · kind B2 · utility
1Cited by
19References
20Claims
0Family size
Assignee
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Key dates
| Filing date | May 15, 2015 |
| Grant date | Oct 31, 2017 |
| Priority date | — |
| Expiry date | Dec 6, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/398
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present disclosure provides one embodiment of an IC method that includes receiving an IC design layout including a first main feature and inserting a first plurality of scattering bars in the IC design layout to form a first circular pattern of scattering bars around the first main feature. The first main feature is positioned at a center portion of the first circular pattern of scattering bars.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.