Semiconductor devices having a TSV, a front-side bumping pad, and a back-side bumping pad
US9806004B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2015 |
| Grant date | Oct 31, 2017 |
| Priority date | — |
| Expiry date | Nov 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/381
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices are provided. The semiconductor devices include a substrate, a first interlayer insulating layer disposed on a front-side of the substrate, a TSV structure passing through the first interlayer insulating layer and the substrate. The TSV structure has a bottom end protruding from a back-side of the substrate, a back-side insulating layer and a back-side passivation layer disposed on the back-side of the substrate, and a bumping pad buried in the back-side insulating layer and the back-side passivation layer and disposed on the bottom end of the TSV structure. The bottom end of the TSV structure protrudes into the back-side bumping pad, and top surfaces of the back-side passivation layer and the back-side bumping pad are coplanar.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.