Byunglyul Park
7Patents
3h-index
24Co-inventors
53Inventor score
Filing activity: Sep 3, 2002 → Aug 19, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6709970B1 | Method for creating a damascene interconnect using a two-step electroplating process | Electricity | 17 | Expired |
| US9806004B2 | Semiconductor devices having a TSV, a front-side bumping pad, and a back-side bumping pad | Electricity | 4 | Active |
| US9799619B2 | Electronic device having a redistribution area | Electricity | 4 | Active |
| USD859390S1 | Cover for an electronic device | General | 3 | Active |
| US10020273B2 | Semiconductor devices and methods of forming the same | Electricity | 1 | Active |
| US11121090B2 | Fan-out semiconductor package | Electricity | 1 | Active |
| US11694965B2 | Fan-out semiconductor package | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.