Selective and non-selective barrier layer wet removal

US9806023B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Benjamin D. Briggs · Cohoes, US
• Elbert E. Huang · Carmel, US
• Raghuveer R. Patlolla · Guilderland, US
• Cornelius Brown Peethala · Slingerlands, US
• David L. Rath · Stormville, US
• Hosadurga Shobha · Armonk, US

Key dates

• Filing date: Feb 28, 2017
• Grant date: Oct 31, 2017
• Expiry date: Feb 28, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76834
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for manufacturing a semiconductor device includes forming a dielectric layer on a substrate, forming a plurality of openings in the dielectric layer, conformally depositing a barrier layer on the dielectric layer and on sides and a bottom of each one of the plurality of openings, depositing a contact layer on the barrier layer in each one of the plurality of openings, removing a portion of each contact layer from each one of the plurality of openings, and removing a portion of the barrier layer from each one of the plurality of openings, wherein at least the removal of the portion of the barrier layer is performed using an etchant including: (a) a compound selected from group consisting of -azole, -triazole, and combinations thereof; (b) a compound containing one or more peroxy groups; (c) one or more alkaline metal hydroxides; and (d) water.