Vertical channel oxide semiconductor field effect transistor and method for fabricating the same
US9806191B1 · kind B1 · utility
2Cited by
5References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2016 |
| Grant date | Oct 31, 2017 |
| Priority date | — |
| Expiry date | Oct 11, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a source layer; removing part of the source layer to form a first opening; forming a first channel layer in the first opening; forming a gate layer around the first channel layer and on the source layer; forming a drain layer on the gate layer and the first channel layer; removing part of the drain layer to form a second opening; and forming a second channel layer in the second opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.