N-type aluminum nitride monocrystalline substrate
US9806205B2 · kind B2 · utility
2Cited by
3References
7Claims
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Key dates
| Filing date | Jul 21, 2015 |
| Grant date | Oct 31, 2017 |
| Priority date | — |
| Expiry date | Jul 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A silicon-doped n-type aluminum nitride monocrystalline substrate wherein, at a photoluminescence measurement at 23° C., a ratio (I1/I2) between the emission spectrum intensity (I1) having a peak within 370 to 390 nm and the emission peak intensity (I2) of the band edge of aluminum nitride is 0.5 or less; a thickness is from 25 to 500 μm; and a ratio (electron concentration/silicon concentration) between the electron concentration and the silicon concentration at 23° C. is from 0.0005 to 0.001.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.