Semiconductor layer sequence and method for producing a semiconductor layer sequence

US9806224B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Werner Bergbauer · Windberg, DE
• Philipp Drechsel · Regensburg, DE
• Peter Stauß · Nittendorf, DE
• Patrick Rode · Regensburg, DE

Key dates

• Filing date: Jan 28, 2014
• Grant date: Oct 31, 2017
• Expiry date: Jan 28, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

A semiconductor layer sequence includes a first nitridic compound semiconductor layer, a second nitridic compound semiconductor layer, and an intermediate layer arranged between the first and second nitridic compound semiconductor layers. Beginning with the first nitridic compound semiconductor layer, the intermediate layer and the second nitridic compound semiconductor layer are arranged one after the other in a direction of growth of the semiconductor layer sequence and are adjacent to each other in direct succession. The intermediate layer has a lattice constant different from the lattice constant of the first nitridic compound semiconductor layer at least at some points. The second nitridic compound semiconductor layer is lattice-adapted to the intermediate layer at least at some points.