Patent · US Active

Etching liquid, kit of same, etching method using same, method for producing semiconductor substrate product, and method for manufacturing semiconductor element

US9809746B2 · kind B2 · utility

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22Claims
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Key dates

Filing dateDec 2, 2015
Grant dateNov 7, 2017
Priority date—
Expiry dateDec 2, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/32134
  • WIPO fieldBasic materials chemistry
  • WIPO sectorChemistry

Abstract

There is provided an etching liquid including nitric acid; a fluorine-containing compound; and a nitrogen-containing organic compound A containing a nitrogen atom, or a phosphorus-containing compound B.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.