Method for manufacturing silicon single crystal
US9809901B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2014 |
| Grant date | Nov 7, 2017 |
| Priority date | — |
| Expiry date | Dec 22, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B30/04
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for manufacturing a silicon single crystal according to a Czochralski method to manufacture an N-type silicon single crystal, including the steps of: seeding to bring a seed crystal into contact with a silicon melt in a crucible and thereafter, necking to pull the seed crystal to narrow a diameter thereof, wherein a dopant concentration in the silicon melt is predicted by a difference between a temperature at the seeding and a temperature at the necking, and resistivity of the single crystal to be pulled is controlled on the basis of the predicted dopant concentration in the silicon melt. A method for manufacturing a silicon single crystal can efficiently manufacture a silicon single crystal with a desired resistivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.