Patent · US Active

Static random-access memory (SRAM) sensor for bias temperature instability

US9812188B2 · kind B2 · utility

1Cited by

3References

30Claims

0Family size

Assignee

QUALCOMM Incorporated · US

Inventors

Niladri Narayan Mojumder · San Diego, US
Zhongze Wang · San Diego, US
Xiaonan Chen · Boise, US
Stanley Seungchul Song · San Diego, US
Choh Fei Yeap · San Diego, US

Key dates

Filing date	Feb 25, 2015
Grant date	Nov 7, 2017
Priority date	—
Expiry date	Feb 25, 2035

Classification

Technology area (CPC G)Physics
CPC primaryG11C2029/5002
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

An apparatus includes a static random-access memory and circuitry configured to initiate a corrective action associated with the static random-access memory. The corrective action may be initiated based on a number of static random-access memory cells that have a particular state responsive to a power-up of the static random-access memory.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.