Inventor · Boise, ID, US

Xiaonan Chen

32Patents
8h-index
33Co-inventors
71Inventor score

Filing activity: Aug 28, 2009 → Aug 17, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US8958233B2 Stabilization of resistive memory Physics 21 Active
US9112138B2 Methods of forming resistive memory elements Electricity 20 Active
US9576801B2 High dielectric constant/metal gate (HK/MG) compatible floating gate (FG)/ferroelectric dipole non-volatile memory Electricity 15 Active
US9773551B2 Memory programming methods and memory systems Physics 13 Active
US9230685B2 Memory programming methods and memory systems Physics 13 Active
US8189968B2 Multimode interference coupler for use with slot photonic crystal waveguides Physics 10 Active
US8446758B2 Variable resistance memory programming Physics 9 Active
US8730708B2 Performing forming processes on resistive memory Emerging Cross-Sectional Technologies 9 Active
US10304531B2 Memory programming methods and memory systems Physics 6 Active
US9224471B2 Stabilization of resistive memory Physics 6 Active
US9419220B2 Resistive memory elements, resistive memory cells, and resistive memory devices Electricity 4 Active
US10340370B2 Asymmetric gated fin field effect transistor (FET) (finFET) diodes Electricity 4 Active
US9245648B1 Logic high-dielectric-constant (HK) metal-gate (MG) one-time-programming (OTP) memory device sensing method Physics 4 Active
US9508439B2 Non-volatile multiple time programmable memory device Electricity 3 Active
US9876123B2 Non-volatile one-time programmable memory device Physics 3 Active
US10290352B2 System, apparatus, and method of programming a one-time programmable memory circuit having dual programming regions Electricity 3 Active
US8773899B2 Variable resistance memory programming Physics 2 Active
US9576658B2 Systems, and devices, and methods for programming a resistive memory cell Physics 2 Active
US8787095B2 Systems, and devices, and methods for programming a resistive memory cell Physics 2 Active
US9449709B1 Volatile memory and one-time program (OTP) compatible memory cell and programming method Physics 1 Active
US9812188B2 Static random-access memory (SRAM) sensor for bias temperature instability Physics 1 Active
US9413349B1 High-K (HK)/metal gate (MG) (HK/MG) multi-time programmable (MTP) switching devices, and related systems and methods Electricity 1 Active
US10991427B2 Memory programming methods and memory systems Physics 0 Active
US11581037B2 Digital compute-in-memory (DCIM) bit cell circuit layouts and DCIM arrays for multiple operations per column Physics 0 Active
US10964380B1 Integrated device comprising memory bitcells comprising shared preload line and shared activation line Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.