Method for modifying spacer profile
US9812325B2 · kind B2 · utility
2Cited by
1References
12Claims
0Family size
Inventors
Key dates
| Filing date | Sep 2, 2016 |
| Grant date | Nov 7, 2017 |
| Priority date | — |
| Expiry date | Sep 2, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/947
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Techniques herein provide a process to reform or flatten asymmetric spacers to form a square profile which creates symmetric spacers for accurate pattern transfer. Initial spacer formation typically results in spacer profiles with a curved or sloped top surfaces. This asymmetric top surface is isolated while protecting a remaining lower portion of the spacer. The top surface is removed using a plasma processing step resulting in spacers having a squared profile that enables further patterning and/or accurate pattern transfer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.