Inventor · Schenectady, NY, US

Akiteru Ko

57Patents
9h-index
54Co-inventors
77Inventor score

Filing activity: May 25, 2004 → Aug 15, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US10354873B2 Organic mandrel protection process Electricity 324 Active
US9786503B2 Method for increasing pattern density in self-aligned patterning schemes without using hard masks Electricity 39 Active
US9673059B2 Method for increasing pattern density in self-aligned patterning integration schemes Electricity 39 Active
US8735291B2 Method for etching high-k dielectric using pulsed bias power Electricity 37 Active
US9570313B2 Method for etching high-K dielectric using pulsed bias power Electricity 37 Active
US9159575B2 Method for etching high-K dielectric using pulsed bias power Electricity 35 Active
US10290506B2 Method for etching high-K dielectric using pulsed bias power Electricity 35 Active
US9443731B1 Material processing to achieve sub-10nm patterning Electricity 17 Active
US8334083B2 Etch process for controlling pattern CD and integrity in multi-layer masks Electricity 14 Active
US9165765B1 Method for patterning differing critical dimensions at sub-resolution scales Electricity 9 Active
US8236700B2 Method for patterning an ARC layer using SF6 and a hydrocarbon gas Electricity 8 Active
US7888267B2 Method for etching silicon-containing ARC layer with reduced CD bias Electricity 5 Active
US8945408B2 Etch process for reducing directed self assembly pattern defectivity Electricity 4 Active
US8268184B2 Etch process for reducing silicon recess Electricity 4 Active
US9257280B2 Mitigation of asymmetrical profile in self aligned patterning etch Electricity 3 Active
US8980111B2 Sidewall image transfer method for low aspect ratio patterns Electricity 3 Active
US9899219B2 Trimming inorganic resists with selected etchant gas mixture and modulation of operating variables Electricity 3 Active
US7531461B2 Process and system for etching doped silicon using SF6-based chemistry Electricity 2 Expired
US9520270B2 Direct current superposition curing for resist reflow temperature enhancement Performing Operations; Transporting 2 Active
US7743731B2 Reduced contaminant gas injection system and method of using Electricity 2 Active
US9812325B2 Method for modifying spacer profile Emerging Cross-Sectional Technologies 2 Active
US9153457B2 Etch process for reducing directed self assembly pattern defectivity using direct current positioning Performing Operations; Transporting 1 Active
US10217670B2 Wrap-around contact integration scheme Electricity 1 Active
US10260150B2 Method and system for sculpting spacer sidewall mask Electricity 1 Active
US8501628B2 Differential metal gate etching process Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.