Etching methods and methods of manufacturing semiconductor devices using the same
US9812332B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2017 |
| Grant date | Nov 7, 2017 |
| Priority date | — |
| Expiry date | Jan 5, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching method is disclosed. The etching method comprises providing on a substrate a structure comprising a recess region formed therein. The recess region includes an inner part and a mouth part whose width is less than that of the inner part. The etching method further comprises performing a clean-then-etch process to remove at least a portion of etching object formed outside the recess region. The performing a clean-then-etch process comprises performing a cleaning process to fill at least a portion of the recess region with a cleaning solution, and performing a wet etch process to the substrate in a state that the cleaning solution remains in the recess region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.