Bumps bonds formed as metal line interconnects in a semiconductor device
US9812380B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2015 |
| Grant date | Nov 7, 2017 |
| Priority date | — |
| Expiry date | Mar 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor power chip has a semiconductor power device formed on a semiconductor die; wherein the semiconductor power device comprises an array of conductive contact elements; a passivation layer formed over the plurality of conductive contact elements, the passivation layer comprising passivation openings over a plurality of the conductive contact elements; and an array of conductive bumps including one or more interconnection bumps, wherein each interconnection bump is formed over the passivation layer and extends into at least two of the passivation openings and into contact with at least two underlying conductive contact elements to thereby provide a conductive coupling between the at least two underlying conductive contact elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.