Semiconductor devices and methods for fabricating the same
US9812448B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2015 |
| Grant date | Nov 7, 2017 |
| Priority date | — |
| Expiry date | Dec 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a semiconductor device configured to block a physical diffusion path by forming an oxide layer between barrier layers to prevent impurities from being diffused through the physical diffusion path between the barrier layers, and a method for fabricating the semiconductor device. The semiconductor device includes a gate insulation layer formed on a substrate, a first barrier layer formed on the gate insulation layer, an oxide layer formed on the first barrier layer, the oxide layer including an oxide formed by oxidizing a material included in the first barrier layer, a second barrier layer formed on the oxide layer, a gate electrode formed on the second barrier layer, and source/drains disposed at opposite sides of the gate electrode in the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.