Semiconductor devices and methods of manufacturing the same
US9812450B2 · kind B2 · utility
3Cited by
11References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2016 |
| Grant date | Nov 7, 2017 |
| Priority date | — |
| Expiry date | Jan 26, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A semiconductor device includes a plurality of wiring structures spaced apart from each other, and an insulating interlayer structure. Each of the wiring structures includes a metal pattern and a barrier pattern covering a sidewall, a bottom surface, and an edge portion of a top surface of the metal pattern and not covering a central portion of the top surface of the metal pattern. The insulating interlayer structure contains the wiring structures therein, and has an air gap between the wiring structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.