Backside illuminated image sensor and method of manufacturing the same
US9812488B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2015 |
| Grant date | Nov 7, 2017 |
| Priority date | — |
| Expiry date | Sep 15, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
A backside illuminated (BSI) image sensor comprises a semiconductor substrate having a first surface and a second surface opposite to the first surface; a photosensitive element in the semiconductor substrate; a gate structure partially over the first surface of the semiconductor substrate; and a temporary carrier depository in proximity to the first surface of the semiconductor substrate, wherein the gate structure has a plug portion extending from the first surface toward the second surface. The plug portion of the gate structure helps to increase the charge transfer efficiency so as to improve quantum efficiency of the BSI image sensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.