Semiconductor memory device
US9812507B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 3, 2016 |
| Grant date | Nov 7, 2017 |
| Priority date | — |
| Expiry date | Aug 3, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device according to an embodiment comprises: a semiconductor substrate which extends in first and second directions; first wiring lines which are arranged in a third direction, and which extend in the first direction; second wiring lines which are arranged in the first direction and extend in the third direction; and memory cells disposed at intersections of the first wiring lines and the second wiring lines, one of the memory cells including a first film and a second film whose permittivity is different from that of the first film which are stacked in the second direction between one of the first wiring lines and one of the second wiring lines, and the second films of two of the memory cells adjacent in the third direction being separated between the two memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.