Growth of semiconductors on hetero-substrates using graphene as an interfacial layer
US9812527B2 · kind B2 · utility
0Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2017 |
| Grant date | Nov 7, 2017 |
| Priority date | — |
| Expiry date | Mar 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Graphene is used as an interfacial layer to grow Si and other semiconductors or crystalline materials including two-dimensional Si and other structures on any foreign substrate that can withstand the growth temperature without the limitation matching condition typically required for epitaxial growth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.