III-nitride P-channel transistor

US9812532B1 · kind B1 · utility

Assignee

• HRL Laboratories, LLC · US

Inventors

• Rongming Chu · Craydon Court, US
• Yu Cao · Craydon Court, US
• Mary Y. Chen · Oak Park, US
• Zijian Li · Tangxia, CN

Key dates

• Filing date: Aug 28, 2015
• Grant date: Nov 7, 2017
• Expiry date: Aug 28, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/685

Abstract

A field effect transistor includes a III-Nitride channel layer, a III-Nitride doped cap layer on the channel layer, a source electrode in contact with the III-Nitride cap layer, a drain electrode in contact with the III-Nitride cap layer, a gate electrode located between the source and the drain electrodes, and a gate dielectric layer between the gate electrode and the III-Nitride undoped channel layer, wherein the cap layer is doped to provide mobile holes, and wherein the gate dielectric layer comprises a layer of AlN in contact with the channel layer.