Enhanced switch device and manufacturing method therefor
US9812540B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 29, 2013 |
| Grant date | Nov 7, 2017 |
| Priority date | — |
| Expiry date | May 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/66
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An enhanced switch device and a manufacturing method therefor. The method comprises: providing a substrate, and forming a nitride transistor structure on the substrate; fabricating and forming a dielectric layer on the nitride transistor structure, on which a gate region is defined; forming a groove structure on the gate region; depositing a p-type semiconductor material in the groove; removing the p-type semiconductor material outside the gate region on the dielectric layer; etching the dielectric layer in another position than the gate region on the dielectric layer to form two ohmic contact regions; and forming a source electrode and a drain electrode on the two ohmic contact regions, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.