Tungsten gates for non-planar transistors
US9812546B2 · kind B2 · utility
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8References
12Claims
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Key dates
| Filing date | Jan 9, 2017 |
| Grant date | Nov 7, 2017 |
| Priority date | — |
| Expiry date | Jan 9, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium-containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.