LDMOS device having a low angle sloped oxide
US9812566B1 · kind B1 · utility
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18Claims
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Key dates
| Filing date | Jul 3, 2016 |
| Grant date | Nov 7, 2017 |
| Priority date | — |
| Expiry date | Jul 3, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A laterally diffused metal oxide semiconductor (LDMOS) device that may include an oxide region that comprises a bottom surface; a drain that is positioned between a left drift region and a right drift region and below the bottom surface; wherein the oxide region further comprises a first sloped surface and a second sloped surface; wherein a first angle between the first sloped surface and the bottom surface does not exceed twenty degrees; and wherein a second angle between the second sloped surface and the bottom surface of the oxide region does not exceed twenty degrees.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.