Block copolymer and associated photoresist composition and method of forming an electronic device

US9815930B2 · kind B2 · utility

Assignees

• Rohm and Haas Electronic Materials LLC · US
• The University Of Queensland · AU

Inventors

• James W. Thackeray · Braintree, US
• Ke Du · Tangxia, CN
• Peter Trefonas, III · Medway, US
• Idriss Blakey · Brisbane, AU
• Andrew Keith Whittaker · Brisbane, AU

Key dates

• Filing date: Aug 7, 2015
• Grant date: Nov 14, 2017
• Expiry date: Aug 7, 2035

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/11
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A block copolymer useful in electron beam and extreme ultraviolet photolithography includes a first block with units derived from a base-solubility-enhancing monomer and an out-of-band absorbing monomer, and a second block having a low surface energy. Repeat units derived from the out-of-ban absorbing monomer allow the copolymer to absorb significantly in the wavelength range 150 to 400 nanometers. When incorporated into a photoresist composition with a photoresist random polymer, the block copolymer self-segregates to form a top layer that effectively screens out-of-band radiation.