Semiconductor device and manufacturing method thereof
US9816173B2 · kind B2 · utility
2Cited by
37References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2012 |
| Grant date | Nov 14, 2017 |
| Priority date | — |
| Expiry date | Apr 18, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02631
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A material suitable for a semiconductor included in a transistor, a diode, or the like is provided. The material is an oxide material including In, M1, M2 and Zn, in which M1 is an element in the group 13 of the periodic table, a typical example thereof is Ga, and M2 is an element whose content is less than the content of M1. Examples of M2 are Ti, Zr, Hf, Ge, Sn, and the like. To contain M2 leads to suppression of generation of oxygen vacancies in the oxide material. A transistor which includes as few oxygen vacancies as possible can be achieved, whereby reliability of a semiconductor device can be increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.