Method of manufacturing single crystal
US9816199B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2015 |
| Grant date | Nov 14, 2017 |
| Priority date | — |
| Expiry date | Mar 2, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30148
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A manufacturing method of single crystal is provided with a melting process for dissolving raw material in a crucible and a pulling-up process of a single crystal from a melt by the Czochralski method. The pulling-up process includes detecting an edge line of a fusion ring, determining an approximated curve of the edge line by approximating the edge line of the fusion ring by an even function, eliminating constituent pixels of the fusion ring from the image of the fusion ring as noise, the constituent pixels being positioned on the side of the melt relative to the approximated curve and the constituent pixels of the fusion ring and a deviation between the constituent pixels and the approximated curve being a predetermined number of pixels, and calculating the center position of the single crystal from the edge line of the fusion ring from which the noise has been eliminated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.