Magnetic memory element and memory device
US9818464B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2016 |
| Grant date | Nov 14, 2017 |
| Priority date | — |
| Expiry date | Sep 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3295
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a magnetic memory element includes a stacked structure. The stacked structure includes a first and a second stacked member. The first stacked member includes a first and second ferromagnetic layer. A magnetic resonance frequency of the second ferromagnetic layer is a first frequency. A direction of a magnetization of the second ferromagnetic layer is settable to a direction of a first current when a magnetic field of the first frequency is applied to the first stacked member and the first current flows in the first stacked member. The direction of the magnetization of the second ferromagnetic layer does not change when the second current smaller than the first current flows in the first stacked member. The second stacked member includes a third ferromagnetic layer. A magnetization of the third ferromagnetic layer can generate a magnetic field of the first frequency by the second current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.