Robust slope detection technique for STTRAM and MRAM sensing
US9818466B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Jun 30, 2016 |
| Grant date | Nov 14, 2017 |
| Priority date | — |
| Expiry date | Jun 30, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Slope detection systems and methods are provided that monitor magnetic tunnel junction (MTJ) resistance switching. A low-overhead, sample-and-hold circuit can be used. Slope detection techniques can reduce or eliminate bit-to-bit process variation, thereby reducing or eliminating variation in oxide thickness. In addition, the need for data and reference current can be obviated compared to related art techniques, thereby increasing sensing robustness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.