Method for depositing insulating film on recessed portion having high aspect ratio
US9818604B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2015 |
| Grant date | Nov 14, 2017 |
| Priority date | — |
| Expiry date | Jun 16, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of depositing an insulation layer on a trench in a substrate, in which the trench having an aspect ratio of 5:1 or more is formed, including: an insulation layer deposition step of performing an adsorption step of adsorbing silicon to the substrate by injecting a silicon precursor into the inside of a chamber into which the substrate is loaded, a first purge step of removing the unreacted silicon precursor and reaction byproducts from the inside of the chamber, a reaction step of forming the adsorbed silicon as an insulation layer including silicon by supplying a first reaction source to the inside of the chamber, and a second purge step of removing the unreacted first reaction source and reaction byproducts from the inside of the chamber; and a densification step of forming a plasma atmosphere in the inside of the chamber by applying an radio frequency (RF) power and densifying the insulation layer including silicon by using the plasma atmosphere, wherein a frequency of the RF power is in a range of 400 kHz to 2 MHz.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.