Patent · US Active

Anchored interconnect

US9818710B2 · kind B2 · utility

2Cited by
1References
23Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 28, 2014
Grant dateNov 14, 2017
Priority date
Expiry dateMar 28, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/35121
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An embodiment includes a semiconductor structure comprising: a backend portion including a plurality of metal layers between bottom and top metal layers; the top metal layer including a top metal layer portion having first and second opposing sidewall surfaces and a top surface that couples the sidewall surfaces to one another; an insulator layer directly contacting the top surface; and a via coupling a contact bump to the top metal layer portion; wherein a first vertical axis, orthogonal to a substrate coupled to the backend portion, intercepts the contact bump, the nitride layer, the via, and the top metal layer portion. Other embodiments are described herein.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.