MOS-driven semiconductor device and method for manufacturing MOS-driven semiconductor device
US9818845B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2016 |
| Grant date | Nov 14, 2017 |
| Priority date | — |
| Expiry date | Dec 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/155
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A mask used to form an n+ source layer (11) is formed by a nitride film on the surface of a substrate before a trench (7) is formed. At this time, a sufficient width of the n+ source layer (11) on the surface of the substrate is secured. Thereby, stable contact between the n+ source layer (11) and a source electrode (15) is obtained. A CVD oxide film (12) that is an interlayer insulating film having a thickness of 0.1 micrometer or more and 0.3 micrometer or less is formed on doped poly-silicon to be used as a gate electrode (10a) embedded in the trench (7), and non-doped poly-silicon (13) that is not oxidized is formed on the CVD oxide film (12). Thereby, generation of void in the CVD oxide film (12) is suppressed and, by not oxidizing the non-doped poly-silicon (13), a semiconductor apparatus is easily manufactured.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.