Method for producing graphene
US9822009B2 · kind B2 · utility
103Cited by
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4Claims
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Key dates
| Filing date | Nov 20, 2015 |
| Grant date | Nov 21, 2017 |
| Priority date | — |
| Expiry date | Nov 20, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01B2204/32
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A graphene producing method which is capable of increasing a size of each domain of graphene. A plasma CVD film formation device that activates a catalyst metal layer formed on a wafer; modifies the same into an activated catalyst metal layer; decomposes a C2H4 gas as a low reactivity carbon-containing gas by plasma in a space that opposes the wafer; and decomposes a C2H2 gas as a high reactivity carbon-containing gas by heat in the space.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.