Deposition systems and methods
US9822439B2 · kind B2 · utility
0Cited by
3References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2015 |
| Grant date | Nov 21, 2017 |
| Priority date | — |
| Expiry date | Jun 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3323
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A system is disclosed, including a processing chamber for a deposition process; a cathode within the chamber, configured to introduce a sputter gas and a reactive gas adjacent to a target; a substrate holder, disposed opposite the cathode within the processing chamber, configured to secure a substrate to receive a deposition from the target; and a control system configured to monitor a target voltage and to control a flow rate of the reactive gas to maintain the target voltage within a desired range during the deposition process. Methods and devices for deposition processes are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.