Method for implantation of semiconductor wafers having high bulk resistivity
US9824857B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2016 |
| Grant date | Nov 21, 2017 |
| Priority date | — |
| Expiry date | Apr 18, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31703
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion implanter may include an electrostatic clamp to hold a substrate; a plasma flood gun generating a flux of electrons impinging upon the substrate; and a controller coupled to the plasma flood gun and including a component generating a control signal responsive to a measurement signal, the control signal to adjust operation of the plasma flood gun to a target operating level. At the target operating level the flux of electrons may comprise a stabilizing dose of electrons, the stabilizing concentration of electrons, the stabilizing concentration reducing a clamp current variation in the electrostatic clamp to a target value, the target value being less than a second value of clamp current variation when the plasma flood gun is not operating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.